Journal
DIAMOND AND RELATED MATERIALS
Volume 11, Issue 3-6, Pages 1268-1271Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/S0925-9635(02)00008-0
Keywords
carbide; nitrides; SOI; modeling
Ask authors/readers for more resources
The Psi-MOSFET is a device used in SOI electrical characterization. The aim of this paper was to establish a comparison between these transistors made in four variants: (1) with silicon film on buried oxide; (2) with silicon carbide film on buried oxide; (3) with silicon film on buried nitride; and (4) with silicon carbide film on buried nitride. ATLAS software simulated these structures. Besides this virtual experiment, a more complex model for the flat-band voltage is provided. (C) 2002 Elsevier Science B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available