Journal
IEEE TRANSACTIONS ON NANOTECHNOLOGY
Volume 2, Issue 4, Pages 241-245Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNANO.2003.820796
Keywords
point-contact channel; potential fluctuations; room-temperature operation; silicon single-electron transistor (SET); thermal oxidation; ultranarrow wire channel
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We propose a new fabrication technique of room-temperature operating silicon single-electron transistors (SETs). The devices are in the form of ultranarrow wire channel MOSFETs, where a sub-10-nm channel is formed by wet etching and slight thermal oxidation. Large Coulomb blockade (CB) oscillations whose peak-to-valley current ratio at room temperature is as high as 6.8 are observed in the fabricated ultranarrow wire channel MOSFETs. It is found that larger CB oscillations are obtained in the ultranarrow wire channel SETs than in the point-contact channel SETs. It is considered that the potential fluctuations induced during the channel formation processes give rise to multiple-dot SET structures in the ultranarrow wire channel MOSFETs.
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