Journal
PHYSICAL REVIEW B
Volume 68, Issue 24, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.68.245205
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We calculate the spin-relaxation time of conduction electrons in n-doped bulk GaAs. We consider the Elliot-Yafet spin-relaxation mechanism, driven by Coulombic-impurity and electron-electron scattering. We find that these two scattering mechanisms result in relaxation times of equal order of magnitude, but with dissimilar dependences on doping density and temperature. Our theoretical results are compared with experimentally measured spin-relaxation times in gallium arsenide.
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