4.6 Article

Electrical properties of chemical-solution-derived Bi3.54Nd0.46Ti3O12 ferroelectric thin films

Journal

JOURNAL OF APPLIED PHYSICS
Volume 94, Issue 11, Pages 7376-7378

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.1622777

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Bi3.54Nd0.46Ti3O12 (BNdT) thin films were prepared on Pt/TiO2/SiO2/Si substrates by chemical solution deposition. X-ray diffraction measurement indicated the polycrystalline nature of these films. Ferroelectric, dielectric, and leakage current characteristics of Pt/BNdT/Pt capacitors were studied. The remanent polarization and coercive field were 8.5 muC/cm(2) and 47 kV/cm, respectively, at 5 V stimulative voltage. The relative permittivity and dissipation factor at 100 kHz were around 510 and below 0.02, respectively. Fatigue free behavior of BNdT thin films was confirmed by essentially constant polarizations during 100 kHz bipolar switching up to 1.4x10(10) switches. The dependence of leakage current on dc voltage suggested Schottky and Poole-Frenkel emission behavior below 100 kV/cm, followed by dielectric breakdown. (C) 2003 American Institute of Physics.

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