Journal
THIN SOLID FILMS
Volume 444, Issue 1-2, Pages 44-51Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/S0040-6090(03)01101-5
Keywords
manganese oxide; atomic layer deposition (ALD)
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Thin films of manganese oxide are made by the ALD (atomic layer deposition) technique using Mn(thd)(3) (Hthd=2,2,6,6-tetramethylheptan-3,5-dione) and ozone as precursors. Pulse parameters for ALD-type growth are established and such growth can be achieved at deposition temperatures between 138 and 210 degreesC. Films have been deposited on both soda-lime glass and Si(100) single crystals. The electrical resistivities of as-deposited films grown on soda-lime glass are measured to be 0.3-3.2 Omega cm (linear four-point-probe measurements). (C) 2003 Elsevier B.V. All rights reserved.
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