Journal
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
Volume 199, Issue -, Pages 235-239Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/S0168-583X(02)01531-8
Keywords
amorphous compound semiconductors; ion implantation
Ask authors/readers for more resources
Extended X-ray absorption fine structure has been utilised to determine the structural parameters of the amorphous III-V semiconductors GaP, GaAs, InP and InAs. The amorphous phase was formed by ion implantation to inhibit preparation-specific artefacts associated with the alternative fabrication techniques of sputtering and evaporation. Relative to crystalline standards, increases in bond length and Debye-Waller factor were apparent for all materials with a slight reduction in coordination number (3.8-4 atoms). Similarly, homopolar bonding in the amorphous phase was measurable for all materials. For example, In-In bonding in amorphous InP comprised similar to18% of the total In bonds and demonstrated the necessity of a ring distribution containing both even and odd members. (C) 2002 Elsevier Science B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available