Journal
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume 42, Issue 12, Pages 7294-7295Publisher
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.42.7294
Keywords
silicon carbide; chemical vapor deposition; purity; deep level; non-basal plane
Categories
Ask authors/readers for more resources
Homoepitaxial growth of 4H-SiC(1120) and (0338) by hot-wall chemical vapor deposition has been investigated. Both the residual-donor concentration and deep-level concentrations can be reduced by increasing the C/Si ratio during growth. The optimum C/Si ratio for obtaining high-quality epilayers with good morphology is higher on the non-basal planes than,on off-axis (0001). The correlation between deep levels and growth condition is discussed.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available