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JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume 42, Issue 1, Pages 208-212Publisher
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.42.208
Keywords
reactive magnetron sputtering; titanium nitride; heteroepitaxy; pole figure; lattice mismatch
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Epitaxial growth of a titanium nitride film on sapphire is achieved at room temperature by means of reactive sputtering. An exceptionally low full-width at half maximum (FWHM) from the X-ray rocking curve of 0.07degrees (252 arcsec) is measured for the film grown at 600degreesC with a thickness of 50 nm.
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