Journal
MICROELECTRONIC ENGINEERING
Volume 70, Issue 2-4, Pages 144-157Publisher
ELSEVIER
DOI: 10.1016/S0167-9317(03)00380-0
Keywords
nickel silicide; NiSi; diffusion; metal rich phase; agglomeration; film stability; CoSi2
Ask authors/readers for more resources
In this paper, we review some of the advantages and disadvantages of nickel silicide as a material for the electrical contacts to the source, drain and gate of current and future CMOS devices. We first present some of the limitations imposed on the current cobalt silicide process because of the constant scaling, of the introduction of new substrate geometries (i.e. thin silicon on insulator) and of the modifications to the substrate material (i.e. SiGe). We then discuss the advantages of NiSi and for each of the CoSi2 limitations, we point out why Ni is believed to be superior from the point of view of material properties, miscibility of phases and formation mechanisms. Discussion follows on the expected limitations of NiSi and some of the possible solutions to palliate these limitations. (C) 2003 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available