Journal
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
Volume 50, Issue 6, Pages 1839-1845Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNS.2003.820727
Keywords
bulk damage; protons; radiation; retention time; sunchronous dynamic random access memory (SDRAM)
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A new failure mode that is attributable to the bulk damage caused by single protons has been reported in 256-Mbit SDRAMs. The refresh rate required to retain memorized data was measured as a typical parameter to detect the effect. We performed the proton irradiation test and discussed results regarding the influence of this failure.
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