Journal
SOLID-STATE ELECTRONICS
Volume 47, Issue 12, Pages 2211-2214Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/S0038-1101(03)00199-0
Keywords
gate insulator; wide-gap insulator; SrTiO3 substrate; CaZrO3; CaHfO3; LaGaO3; NdGaO3; zirconate; hafnate; gallate
Ask authors/readers for more resources
Wide-gap insulator films, CaZrO3, CaHfO3, LaGaO3, and NdGaO3, were grown on SrTiO3(1 0 0) substrates with the aim of obtaining a gate insulator for epitaxial oxide devices. We show that CaZrO3 and CaHfO3 films were epitaxial and had a multi-domain in-plane structure due to their highly distorted perovskite structure. Most of the LaGaO3 and NdGaO3 films were polycrystalline, and therefore showed relatively high leak currents. CaHfO3 had the best crystallinity among these four materials. (C) 2003 Elsevier Ltd. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
