Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 50, Issue 1, Pages 239-245Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2002.806962
Keywords
avalanche multiplication; CCDs; excess noise; image intensifiers; image sensors; impact ionization; low light level imaging; probability distribution function; single photon detection
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This paper describes recent progress in technology of low light level image sensing using CCD sensors that multiply charge by impact ionization before its conversion into a voltage. The paper presents a brief description of the concept, the outline of a typical sensor design with some important details related to prevention of serial register blooming and achieving high dynamic range (DR), and then focuses primarily on the measurement and analysis of noise components that are important in these devices. The paper describes the theory of excess noise, shows the computation of the output signal probability distribution function (PDF), and the derivation of formula for the excess noise factor (ENF). Finally, it is concluded that under suitable conditions it is possible to achieve a single photon (electron) detection (SPD) performance.
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