Effect of electron irradiation on the galvanomagnetic properties of InxBi2-xTe3 semiconductor single crystals

The effect of 5-MeV electron irradiation of p-InxBi2 - xTe3 single crystals (x = 0, 0.04, 0.07), performed at 250 K, on the galvanomagnetic properties of the crystals was studied. The irradiation was shown to change the conduction from the p to the n type. Annealing at temperatures of 310-390 K restores the conduction to the p type. The reversal of the conduction type and variation of the carrier concentration can be accounted for by an increase in the concentration of charged point radiation defects produced in InxBi2 - xTe3 by irradiation. Electron irradiation of p-type Te single crystals reduces the electrical resistivity without reversing the conduction type. Annealing restores the original properties almost completely. (C) 2003 MAIK Nauka / Interperiodica.