Optical properties and electrical characterization of p-type ZnO thin films prepared by thermally oxiding Zn3N2 thin films

In this paper, we report a simple method for preparing p-type ZnO thin films by thermal oxidization of Zn3N2 thin films. The Zn3N2 films were grown on fused silica substrates by using plasma-enhanced chemical vapor deposition from a Zn(C2H5)(2) and NH3 gas mixture. The Zn3N2 film with a cubic antibixbyite structure transformed to ZnO:N with a hexagonal structure as the annealing temperature reached 500degreesC. When the annealing temperature reached 700degreesC, a high-quality p-type ZnO film with a carrier density of 4.16x10(17) cm(-3) was obtained, for which the film showed a strong near-band-edge emission at 3.30 eV without deep-level emission, and the full width at half-maximum of the photoluminescence spectrum was 120 meV at room temperature. The origin of the ultraviolet band was the overlap of free exciton and the bound exciton. The N concentration was as high as 10(21) cm(-3), which could be controlled by adjusting the parameters of the annealing processes.