Controlled switching dynamics in Si-SiO2-VO2 structures

The dynamic current-voltage characteristics of a Si-SiO2-VO2 structure exhibiting the switching effect have been studied. It is demonstrated that the switching dynamics in this system can be controlled either by applying a bias voltage to the silicon substrate or by illuminating the vanadium dioxide surface. The latter method is based on the light-induced variation of the capacitance of the space charge region. The possibility of creating new semiconductor devices employing these effects is considered. (C) 2003 MAIK Nauka/Interperiodica.