Journal
NANO LETTERS
Volume 3, Issue 1, Pages 43-45Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl0258473
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The fabrication of arrays of sub-50-nm gold dots and line structures with deliberately designed 12-100-nm gaps is reported. These structures were made by initially using dip-pen nanolithography to pattern the etch resist, 16-mercaptohexadecanoic acid, on Au/Ti/SiOx/Si substrates and then using wet-chemical etching to remove the exposed gold.
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