Journal
IEEE ELECTRON DEVICE LETTERS
Volume 24, Issue 11, Pages 683-685Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2003.817386
Keywords
light-emitting diodes (LEDs); lighting; omnidirectional reflectors (ODRs); optical materials; optical reflection; semiconductor materials; solid-state lighting
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An electrically conductive onmidirectional reflector (ODR) is demonstrated in an AlGaInP light-emitting diode (LED). The ODR serves as p-type contact and comprises the semiconductor, a metal layer and an intermediate low-refractive index dielectric layer. The dielectric layer is perforated by an array of AuZn microcontacts thus enabling electrical conductivity. It is shown that the ODR significantly increases light extraction from an AlGaInP LED as compared to a reference LED employing a distributed Bragg reflector (DBR). External quantum efficiencies of 18% and 11% are obtained for the ODR- and the DBR-LED, respectively.
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