Journal
SEMICONDUCTORS
Volume 37, Issue 3, Pages 259-262Publisher
AMER INST PHYSICS
DOI: 10.1134/1.1561514
Keywords
-
Categories
Ask authors/readers for more resources
The influence exerted by doping with Cu and Ag acceptor impurities at a content of 1, 3, and 5 at. % on the luminescence and photoconductivity of zinc oxide films has been studied. Electron-beam evaporation in optimal modes has been used to obtain films with predominant luminescence in the UV spectral range. It has been shown that the incorporation of copper yields three types of point defects in ZnO: Cu-Zn (3d(10)), Cu-Zn (3d(9)), and Cu-i; and in silver, a single type: Ag-Zn (3d(10)). Precipitation of a silver oxide phase at the highest impurity concentration has been observed. Impurity incorporation leads to a pronounced increase in the resistance and photosensitivity of films. (C) 2003 MAIK Nauka/Interperiodica.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available