Journal
PROCEEDINGS OF THE IEEE
Volume 91, Issue 11, Pages 1765-1771Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPROC.2003.818323
Keywords
future dynamic RAM (DRAM); future memory; memory paradigm; multilevel cell (MLC) Flash; NAND Flash; nanotechnology memory; new memory growth model; 90-nm memory
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As we enter the nanotechnology era, a big shift in paradigm comes to the memory industry The traditional computer industry for dynamic RAM is expected to mature its memory-bit consumption with a relatively low growth rate. Meanwhile, the memory consumption and high-density memory usage in mobile handsets and digital consumer applications will grow very fast. For these new applications, NAND Flash memory will be the key enabling technology and its easy scaling and multibit/cell capabilities require a new memory growth model. The well-known Moore's law still. holds for most cases after the quarter-century history of the intergrated circuit industry. However, the paradigin shift in the memory industry requires a new memory growth model: a twofold increase per year in memory density This paper will cover some details of recent memory technologies, application trends, and the proposed new memory growth model.
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