Journal
INTEGRATED FERROELECTRICS
Volume 52, Issue -, Pages 195-203Publisher
TAYLOR & FRANCIS LTD
DOI: 10.1080/10584580390254538
Keywords
ferroelectric-gate FET; (Bi,La)(4)Ti3O12; HfO2; MFIS; memory device
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Ferroelectric gate FET's with BLT/HfO2 structure were fabricated on 5-inch-scale Si wafer using well-refined CMOS compatible 0.8 mum-based fabrication processes for the first time. We obtained excellent device characteristics and good memory operations of the fabricated n-ch and p-ch MFIS-FET's, in which the memory window and on/off drain current ratio of typical p-ch memory device were measured to be 1.5 V at V-G of +/-5 V and 8 orders-of-magnitude, respectively. We also confirmed by evaluating the gate voltage and gate size dependences of device properties that the fabricated devices showed quantitatively reasonable ferroelectric memory operations.
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