Journal
CATALYSIS TODAY
Volume 225, Issue -, Pages 18-23Publisher
ELSEVIER
DOI: 10.1016/j.cattod.2013.08.027
Keywords
High facets; TiO2; Sn doping; Photocatalyst; First-principle calculations
Funding
- National Natural Science Foundation of China [20973059, 91022023, 21076076, 21073060, 21203061]
- Program for professor Special Appointment (Eastern Scholar) at Shanghai Institutions of High Learning, Shanghai Municipal Natural Science Foundation [12ZR1407500]
- Major Basic Research Programme of science and Technology Commision of Shanghai Municipality [10JC1403200]
- Australian Research Council's Future Fellowships [FT120100913]
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Electronic structures of semiconductor photocatalysts control the light absorbance, charge-carrier separation and mobility, activation energy and consequently, photocatalytic activity. Ion doping has been widely used to modify the electronic structure of a semiconductor photocatalyst. Here, we successfully synthesized Sn doped single crystalline anatase TiO2 particles dominated with {1 0 5} facets by a gas phase oxidation process, and their structure and composition were thoroughly analyzed by XRD/TEM/FESEM/XPS. The photoluminescence emission spectra measurements reveal that the small amount of doped Sn in TiO2 could suppress the recombination of photogenerated electron-hole pairs. Thus, the Sn doped TiO2 shows a significantly enhanced photocatalytic hydrogen evolution performance, with its hydrogen generation rate being 4.5 times higher than that of pure TiO2. First-principle simulation results suggest the doped Sn at the edge exhibit higher adsorption energy toward H, which could promote the H-2 generation from the splitting of water. (C) 2013 Elsevier B.V. All rights reserved.
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