Journal
PHYSICAL REVIEW B
Volume 69, Issue 4, Pages -Publisher
AMERICAN PHYSICAL SOC
DOI: 10.1103/PhysRevB.69.041202
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We have studied the magnetic and transport properties of an ultralow-resistivity two-dimensional electron system in a Si/SiGe quantum well. The spin polarization increases linearly with the in-plane magnetic field and the enhancement of the spin susceptibility is consistent with that in Si-MOS structures. Temperature dependence of resistivity remains metallic even in strong magnetic fields where the spin degree of freedom is frozen out. We also found a magnetoresistance anisotropy with respect to an angle between the current and the in-plane magnetic field.
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