Journal
IEEE PHOTONICS TECHNOLOGY LETTERS
Volume 16, Issue 1, Pages 15-17Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2003.819387
Keywords
sampled grating; semiconductor laser; tunable laser diode; wavelength-division multiplexing (WDM); wide tuning
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A new widely tunable laser diode structure that requires only two tuning currents is proposed. The laser diode consists of a sampled grating distributed feedback (SGDFB) laser diode monolithically integrated with a sampled grating distributed Bragg reflector (SGDBR). The phase control sections are properly inserted between the grating bursts of the SGDBR and SGDFB sections for the discrete and continuous tuning. To confirm the feasibility of the new structure, the split-step time domain model is used. The simulation result for a particular design shows that the tuning range as wide as 27 nm is possible with side-mode suppression ratio exceeding 35 dB. Furthermore, the output power is larger than that from SGDBR laser diodes with similar parameters.
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