4.3 Article

Growth of lead chalcogenide thin films using single-source precursors

Journal

JOURNAL OF MATERIALS CHEMISTRY
Volume 14, Issue 8, Pages 1310-1315

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/b313063k

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A series of lead dithiocarbamato complexes, [Pb(S2CNRR')(2)] (R = Me, Et; R' = Pr-i, Bu-n) and dichalcogenoimidodiphoshanto complexes, [Pb(((EPPr2)-Pr-i)(2)N)(2)] (E = S, Se) have been synthesised and characterised. These compounds have been employed as single-source precursors for the growth of lead chalcogenide thin films by aerosol-assisted chemical vapour deposition (AACVD) and low-pressure metal organic chemical vapour deposition (LP-MOCVD) on glass substrates. X-Ray powder diffraction (XRPD) studies show that the films are composed of cubic PbS/Se. The solid-state structures of the symmetrically substituted complexes, [Pb(S2CNR2)(2)] (R = C6H10, C5H11), have been determined by single-crystal X-ray crystallography.

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