Preparation and electrical properties of Bi3.25Pr0.75Ti3O12 ferroelectric thin films

Bi3.25Pr0.75Ti3O12 (BPT) ferroelectric thin films have been prepared by chemical solution deposition on platinized Si substrates. Well-crystallized BPT films can be achieved by 600degreesC rapid thermal annealing. The film surface is smooth and crack-free, composed of uniform spherical grains around 90-100 nm in diameter. The electrical properties of Pt/BPT/Pt thin film capacitors were characterized by hysteresis and impedance measurements. The remanent polarization of 700degreesC annealed BPT films is around 20 muC/cm(2) at 120-kV/cm stimulus field. The dielectric constant is around 380 at 10 kHz, 100-mV amplitude. The remanent polarization of BPT film showed a slight reduction, 10% of its original value, after 2.8 x 10(9) cycles, while a similar to30% reduction of non-volatile polarization was observed.