Journal
IEEE TRANSACTIONS ON NANOTECHNOLOGY
Volume 4, Issue 1, Pages 71-76Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNANO.2004.840157
Keywords
quantum dot; shot-noise spectrum; spin-flip scattering; spin-related resonant tunneling
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In this paper, we present theoretical investigation of the zero-frequency shot-noise spectra in electron tunneling through an interacting quantum dot connected to two ferromagnetic leads with the possibility of spin-flip scattering between the two spin states by means of the recently developed bias-voltage and temperature-dependent quantum rate equations. For this purpose, a generalization of the traditional generation-recombination approach is made for properly taking into account the coherent superposition of electronic states, i.e., the nondiagonal density matrix elements. Our numerical calculations find that the Fano factor increases with increasing the polarization of the two leads, but decreases with increasing the intradot spin-flip scattering.
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