Interface thermal conductance and rectification in hybrid graphene/silicene monolayer

This paper investigates the interface thermal conductance G and interface thermal rectification R of hybrid GE/SE monolayers via molecular dynamic simulations. The results show that G not only increases with the temperature but also with the monolayer length at a given temperature until it reaches a saturated value. At 300 K, the saturated value is found to be similar to 250 MW/m(2) K. In contrast, R decreases with increasing monolayer length and temperature. Furthermore, both G and R can be significantly affected by tensile strain applied on SE along the interface direction, but both are almost independent of the heat flux J. A critical value J = 42 GW/m(2) is determined, above which low-frequency kinetic waves are excited and provide an additional channel for heat transport. Detailed phonon spectra analyses are conducted to understand the thermal transport mechanisms. (C) 2014 Elsevier Ltd. All rights reserved.