Journal
CARBON
Volume 56, Issue -, Pages 218-223Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.carbon.2013.01.005
Keywords
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Funding
- Key Research Program of the Chinese Academy of Sciences [KGZD-EW-202-4]
- National Natural Science Foundation of China [21201173]
- Zhejiang Provincial Natural Science Foundation of China [R4100194]
- 973 program [2011CB935900]
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A simple method to prepare nitrogen-doped graphene (NG) by a pressure-promoted process at relatively low temperatures is demonstrated. The NG with an atomic N content higher than 10% can be obtained by heating graphene oxide and NH4HCO3 in a sealed autoclave at a temperature as low as 150 degrees C. The product exhibits a specific capacitance of 170 F g(-1) at 0.5 A g(-1) in 5 M KOH, and a high retention rate of 96.4% of its initial capacitance after 10,000 charge/discharge cycles at a current density of 10 A g(-1). Such an easy, cost-effective and low-temperature doping process will be promising for preparing devices based on NG. (c) 2013 Elsevier Ltd. All rights reserved.
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