Journal
CARBON
Volume 53, Issue -, Pages 182-187Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.carbon.2012.10.046
Keywords
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Funding
- WCU through NRF
- Korean government (MEST) [R31-10026]
- MKE
- KIAT
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The origin of the device instability of chemical vapor deposited graphene metal oxide semiconductor field effect transistor has been investigated while varying the characterization time scale from milliseconds to a few tens of seconds. When oxygen diffusion to the graphene interface was suppressed with Al2O3 passivation layer, the hysteresis activated with a, time scale over a few tens of seconds was reduced significantly at both electron and hole branches of current-voltage curves. However, a fast charge trapping process occurring within a few milliseconds was not affected by the passivation and became a dominant mechanism of hysteresis. (C) 2012 Elsevier Ltd. All rights reserved.
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