Journal
CARBON
Volume 50, Issue 1, Pages 329-331Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.carbon.2011.07.062
Keywords
-
Funding
- Chinese Academy of Sciences [KGCX2-YW-231]
- Shanghai Science and Technology Commission [10DJ1400600]
- National Science and Technology Major Projects [2011ZX02707]
Ask authors/readers for more resources
Direct graphene growth was demonstrated on exfoliated hexagonal boron nitride (h-BN) single crystal flakes by low pressure CVD. The size of the hexagonal single crystal graphene domain increases with deposition time, with maximum size of similar to 270 nm. Most domains were found to nucleate at screw dislocation sites, and a step-flow growth mechanism was observed at atomic steps on the h-BN surface. Understanding the nucleation and growth mechanisms is an important step towards the synthesis of large single crystal graphene on h-BN substrates. (C) 2011 Elsevier Ltd. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available