Journal
CARBON
Volume 50, Issue 10, Pages 3682-3687Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.carbon.2012.03.041
Keywords
-
Funding
- Czech Grant Agency [P208/12/1062]
Ask authors/readers for more resources
The growth of graphene during Cu-catalyzed chemical vapor deposition was studied using (CH4)-C-12 and (CH4)-C-13 precursor gasses. We suggest that the growth begins by the formation of a multilayer cluster. This seed increases its size but the growth speed of a particular layer depends on its proximity to the copper surface. The layer closest to the substrate grows fastest and thus further limits the growth rate of the upper layers. Nevertheless, the growth of the upper layers continues until the copper surface is completely blocked. It is shown that the upper layers can be removed by modification of the conditions of the growth by hydrogen etching. (C) 2012 Elsevier Ltd. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available