Journal
CARBON
Volume 50, Issue 12, Pages 4476-4482Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.carbon.2012.05.026
Keywords
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Funding
- Prof. Ajayan's Laboratory
- Fundamental Research Funds for the Central Universities [lzujbky-2011-52]
- Key Laboratory of Materials for High-Power Laser Shanghai Institute of Optics and Fine Mechanics
- Exotic Nanocarbons, Japan Regional Innovation Strategy Program by Excellence, JST
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Large area nitrogen (N)-doped graphene films were grown on copper foil by chemical vapor deposition. The as-grown films consisted of a single atomic layer that was continuous across the copper surface steps and grain boundaries, and could be easily transferred to a variety of substrates. N-doping was confirmed by X-ray photoelectron spectroscopy, Raman spectroscopy, and elemental mapping. N atoms were suggested to mainly form a pyrrolic nitrogen structure, and the doping level of N reached up to 3.4 at.%. The N-doped graphene exhibited an n-type behavior, and nitrogen doping would open a band gap in the graphene. This study presents use of a new liquid precursor to obtain large area, continuous and mostly single atom layer N-doped graphene films. (C) 2012 Elsevier Ltd. All rights reserved.
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