Journal
CARBON
Volume 49, Issue 1, Pages 280-285Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.carbon.2010.09.021
Keywords
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Funding
- EPSRC
- Engineering and Physical Sciences Research Council [EP/E500293/1] Funding Source: researchfish
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The potential applications of carbon nanotubes grown for semiconductor and sensor devices are immense But, this growth must be CMOS compatible and over large-areas, in excess of 4 inches in diameter, for any industrial interest Reports of low-temperature growth of carbon nanotubes have mostly resulted in false dawns in the context of CMOS production, with direct integration for mass manufacturing remaining a challenge, as lower synthesis temperatures matched to manufacturing result in nanotubes with high defect levels We report a unique 'top-down' synthesis method that allows energy delivery directly to the catalyst, resulting in higher quality nanotube growth at compatible low sub strate temperatures This growth is demonstrated over a large-area, whilst maintaining the silicon substrate below 350 degrees C Long-range ordering of carbon nanotubes is supported by well developed second order Raman peaks and HREM The methodology developed is suitable to produce many nano-material systems, including graphene and silicon nanowires (C) 2010 Elsevier Ltd All rights reserved
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