Journal
PHYSICAL REVIEW B
Volume 71, Issue 3, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.71.035214
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The temperature and electric-field dependence of charge carrier mobility has been studied by a conventional time-of-flight technique in chemically purified, low dark conductivity samples of regioregular poly(3-hexylthiophene). Subsequently, the mobility of doping-induced charge carriers has been determined using the technique of charge carrier extraction by linearly increasing voltage in the same samples exposed to air. The charge carrier mobility determined by both experimental techniques correspond well to each other at temperatures above 130 K, indicating that these experimental techniques are mutually consistent. The study clearly shows that the typical log muproportional tobetaE(1/2), beta>0 Poole-Frenkel-like electric-field dependence of the charge carrier mobility diminishes at temperatures around 250-270 K, and beta becomes negative at higher temperatures. Such negative electric-field dependence of mobility observed by both experimental techniques is attributed to positional disorder in a random-organic dielectric and analyzed in the framework of the disorder formalism. Finally, the overall agreement indicates that the mode of charge generation has negligible effect on the temperature- and electric-field dependence of mobility except at the lowest temperatures (<110 K), where transit time dispersion of the photogenerated charge carriers probed by the ToF technique is more pronounced.
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