Journal
CHEMICAL COMMUNICATIONS
Volume -, Issue 31, Pages 3995-3997Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/b506676j
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Two-dimensional nanowalls of GaS and GaSe are obtained by thermal exfoliation around 900 degrees C, and transformed to Ga2O3 and GaN nanowalls upon reaction with air and ammonia respectively at 800 degrees C, while maintaining dimensional integrity.
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