Journal
IEEE PHOTONICS TECHNOLOGY LETTERS
Volume 17, Issue 1, Pages 175-177Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2004.836917
Keywords
Germanium (Ge); photodetectors; resonant cavity enhanced (RCE); silicon-on-insulator (SOI)
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We have designed and fabricated high-speed resonant cavity enhanced germanium (Ge) Schottky photodetectors on a silicon-on-insulator substrate. These back-illuminated detectors have demonstrated 3-dB bandwidths of more than 12 GHz at 3-V reverse bias and a peak quantum efficiency of 59% (R = 0.73 A/W) at the resonant wavelength of similar to1540 nm. Time domain measurements of our Ge photodetectors with diameters of up to 48 mum show transit-time limited impulse responses corresponding to bandwidths of at least 6.7 GHz, making these detectors compatible with 10-Gb/s data communication systems.
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