Growth of aligned ZnO nanorods on Pt buffer layer coated silicon substrates using metallorganic chemical vapor deposition

A high density of aligned ZnO nanorods was grown on Pt buffer layer coated Si substrates. Ultrathin Pt buffer layers were deposited on Si(111). The ZnO nanorods were synthesized by metallorganic chemical vapor deposition using diethylzinc and oxygen. The optimum growth temperature was 450 degrees C to obtain aligned ZnO nanorods. The grown ZnO nanorods had singlecrystalline atomic structure and pure compositions without any impurities. The nanorods showed a strong near-band-edge PL emission at 3.27 eV with no significant deep- level emission peaks. The morphology of ZnO nanorods grown on Pt buffer layer was compared with other buffer layers such as atomic layer deposited ZnO and Zr metal buffer film. (c) 2005 The Electrochemical Society.