Characterization of planar semipolar gallium nitride films on spinel substrates

Specular, planar semipolar gallium nitride films were grown by hydride vapor phase epitaxy. This is the first report of high quality semipolar GaN films that could be used for device growth. Planar films of (1011)GaN have been grown on (100)MgAl2O4 spinel, and planar films of (10 (13) over bar )GaN have been grown on (110)MgAl2O4 spinet. The in-plane epitaxial relationship for (10 (11) over bar )GaN on (100) spinet was [10 (12) over bar](GaN) vertical bar vertical bar [011](spinel) and [1 (2) over bar 10](GaN) vertical bar vertical bar [0 (1) over bar1](spinel). The in-plane epitaxial relationship for (10 (13) over bar )GaN on (110) spinel was [30 (32) over bar](GaN) vertical bar vertical bar [001](spinel) and [1 (2) over bar 10](GaN) vertical bar vertical bar [(1) over bar0](spinel).