Journal
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
Volume 44, Issue 1-7, Pages L173-L175Publisher
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.44.L173
Keywords
nonpolar; m-plane; InGaN; light-emitting diode; free-standing; electroluminescence
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We report the fabrication of nonpolar m-plane InGaN/GaN multiple-quantum well light-emitting diodes (LEDs) on freestanding in-plane GaN substrates. On-wafer continuous wave output power of 240 mu W was measured at 20 mA for a 300 x 300 mu m(2) device, and Output power as high as 2.95 mW was measured at 300 mA. There was no sign of saturation of the output power at high drive currents. An emission peak at 450 nm was obtained on electroluminescence measurements with high drive currents. The current-voltage characteristics of these LEDs showed rectifying behavior with a turn-on voltage of 3-4 V.
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