Journal
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
Volume 44, Issue 12-15, Pages L364-L366Publisher
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.44.L364
Keywords
photodiode; subwavelength aperture; optical near-field; surface plasmon
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Nano-photodiodes with a subwavelength active area using the optical near-field enhanced by surface plasmon resonance are proposed. We fabricated a Si Schottky photodiode that consists of an active area of 300 nm in diameter and a surface plasmon antenna to generate the carrier within the active area efficiently. The fabricated photodiode shows an increase of the photocurrent by several tenfold compared to that without a surface plasmon antenna. This result suggests an enhanced photogeneration of carriers in a semiconductor via surface plasmon resonance. Such a Si nano-photodiode is a potential high-speed optical signal detector because the opto-electronic conversion process occurs within a subwavelength scale.
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