Journal
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
Volume 44, Issue 20-23, Pages L617-L619Publisher
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.44.L617
Keywords
high-angle annular dark-field imaging; high-k gate dielectrics; oxide/semiconductor interfaces; scanning transmission electron microscopy
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Atomic resolution high-angle annular dark-field imaging in scanning transmission electron microscopy is used to determine atomic arrangements at LaAlO3/Si interfaces, which were obtained by growing Si films epitaxially on (001) LaAlO3 single crystals. An unusual 3 x 1 interface reconstruction, in which every third La column is removed from the interface plane, is observed. The interface atomic structure is discussed in the context of electrically favorable interfacial bonding between the ionic oxide and Si.
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