Galvanic deposition of nanostructured noble-metal films on silicon

Large-area nanostructured noble-metal films (Ag, Pt, and Au) can be deposited with high yields and various morphologies on silicon formed between the semiconductor and the noble metal by means of a galvanic cell. It is shown that the morphology of Ag, which is different from that of Pt and Au, can be influenced markedly by the deposition conditions. Distinctive surface-enhanced Raman-scattering features are observed on these Ag films. (c) 2005 The Electrochemical Society.