Journal
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
Volume 44, Issue 20-23, Pages L734-L736Publisher
INST PURE APPLIED PHYSICS
DOI: 10.1143/JJAP.44.L734
Keywords
multiferroic; BiFeO3 thin films; sol-gel solution; leakage current density
Categories
Ask authors/readers for more resources
BiFeO3 (BFO) thin films were formed by depositing sol-gel solutions on Pt/Ti/SiO2/Si < 100 > substrates. Five minute annealing in a nitrogen atmosphere at 500 degrees C was sufficient to obtain crystalline BFO films. The leakage current density in BFO films was found to decrease markedly after optimizing the process conditions of stoichiometric BFO chemical solution. The leakage current density in the range of 10(-8) A/cm(2) was observed for the first time in BFO thin films at room temperature (RT). This range is four orders of magnitude lower than the reported typical value at RT in pure BFO films. Due to the improved leakage current, we could measure nonsaturated and saturated P-E (polarization vs electric field) hysteresis loops at respective RT and 80 K in the BFO films. The saturated remanent polarization at 80 K was 90 mu C/cm(2).
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available