Journal
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
Volume 44, Issue 33-36, Pages L1103-L1104Publisher
INST PURE APPLIED PHYSICS
DOI: 10.1143/JJAP.44.L1103
Keywords
laser; quantum dot; InAs; molecular beam epitaxy; threshold current density; multilayer
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This paper describes the successful stacking of multilayered InAs quantum dots (QD) on a GaAs substrate up to 12 layers. The laser oscillated from the ground state under the condition of mirror loss at less than 7-8 cm(-1). The extremely low threshold current density per QD-layer of 7A/cm(2)/layer was obtained with a lasing wavelength of 1.21 mu m at room temperature, which is the lowest value for any known semiconductor laser.
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