Journal
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
Volume 44, Issue 46-49, Pages L1393-L1396Publisher
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.44.L1393
Keywords
organic field-effect transistor; OFET; Hall effect; rubrene; single-crystal FET
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Hall effect is detected in organic field-effect transistors, using appropriately shaped rubrene (C42H28) single crystals. It turned out that inverse Hall coefficient, having a positive sign, is close to the amount of electric-field induced charge upon the hole accumulation. The presence of the normal Hall effect means that the electromagnetic character of the surface charge is not of hopping carriers but resembles that of a two-dimensional hole-gas system.
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