3.8 Article

Alignment-free top-contact formation for organic thin film transistors with submicron-length channel

Journal

Publisher

JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.44.L479

Keywords

organic thin film transistor; pentacene; top-contact; alignment-free fabrication; submicron-length channel

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We propose a simple fabrication method for self-aligned top contacts for an organic thin film transistor (TFT) that can be miniaturized. The self-aligned top electrodes are formed without any break in the vacuum condition after the formation of an organic channel on the substrate with a prefabricated insulating structure. As a demonstration of this method, pentacene TFTs with submicron-length channels have been fabricated and Successfully operated. Scanning electron microscopy of TFTs reveals well-defined TFT structures as expected.

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