The electrical, optical and structural properties of InxZn1-xOy (0 <= x <= 1) thin films by combinatorial techniques

Indium-zinc-oxide (IZO) compositional libraries were deposited with dc magnetron sputtering onto glass substrates at 100 degreesC and analysed with high throughput, combinatorial techniques. The composition range from 4 to 95 at% In for Zn was explored. A peak in conductivity with delta > 3000 (Omega cm)(-1) was observed at an indium content of similar to70%. The mobility exceeded 30 cm(2) (V s)(-1) and the carrier concentrations were greater than 8 x 10(20) cm(-3). Crystalline phases were observed for In concentrations less than 45% and greater than 80% with an intermediate amorphous region. The low indium content films have a zinc oxide type structure with a ZnO (002) spacing ranging from similar to2.61 to 2.85 Angstrom for 4% In and 45% In, respectively. For indium contents between 82% and 95%, the In2O3 (222) spacing varied from 2.98 to 2.99 Angstrom. Regardless of the composition or the degree of crystallinity, all films showed high optical transparency with the transmission > 80% across the visible spectrum.