Effect of oxygen annealing on domain structure and dielectric properties of 0.91PZN-0.09PT single crystal

Single crystals of 0.91PZN-0.09PT were grown by flux method. Annealing of the crystals under oxygen atmosphere leads to stripe like domains. Dielectric properties were found to be enhances after oxygen annealing. P-E hystersis show increase in the remnant polarization and coercive field. Heat flow measurement does not reflect any significant change in the properties after oxygen annealing. Phase transition temperature remains the same for as grown and oxygen annealed samples. However, a little increase of the phase transition enthalpy is observed in oxygen annealed crystals. The change in properties due to oxygen annealing has been explained in terms of defect movement in the crystals.