Journal
JOURNAL OF ELECTRONIC MATERIALS
Volume 34, Issue 1, Pages 53-61Publisher
SPRINGER
DOI: 10.1007/s11664-005-0180-8
Keywords
Cu interconnects; damascene; texture; stress; orientation imaging microscope (OIM)
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To understand the effect of line width on textural and microstructural evolution of Cu damascene interconnect, three Cu interconnects samples with different line widths are investigated. According to x-ray diffraction (XRD) results the (111) texture is developed in all investigated lines. Scattered {111}<112> and {111}<110> texture components are present in 0.18-mum-width interconnect lines. and the {111}<110> texture was developed in 2-mum-width interconnect lines. The directional changes of the (111) plane orientation with increased line width were investigated by XRD. In addition, microstructure and grain-boundary character distribution (GBCD) of Cu interconnect were measured using electron backscattered diffraction (EBSD) techniques. This measurement demonstrated that a bamboo-like microstructure is developed in the narrow line. and a polygranular structure is developed in the wider line. The fraction of Sigma3 boundaries is increased as the line width increases but is decreased in the blanket film. A new interpretation of textural evolution in damascene interconnect lines after annealing is suggested, based on the state of stress and growth mechanisms of Cu deposits.
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