4.5 Article

Texture investigation of copper interconnects with a different line width

Journal

JOURNAL OF ELECTRONIC MATERIALS
Volume 34, Issue 1, Pages 53-61

Publisher

SPRINGER
DOI: 10.1007/s11664-005-0180-8

Keywords

Cu interconnects; damascene; texture; stress; orientation imaging microscope (OIM)

Ask authors/readers for more resources

To understand the effect of line width on textural and microstructural evolution of Cu damascene interconnect, three Cu interconnects samples with different line widths are investigated. According to x-ray diffraction (XRD) results the (111) texture is developed in all investigated lines. Scattered {111}<112> and {111}<110> texture components are present in 0.18-mum-width interconnect lines. and the {111}<110> texture was developed in 2-mum-width interconnect lines. The directional changes of the (111) plane orientation with increased line width were investigated by XRD. In addition, microstructure and grain-boundary character distribution (GBCD) of Cu interconnect were measured using electron backscattered diffraction (EBSD) techniques. This measurement demonstrated that a bamboo-like microstructure is developed in the narrow line. and a polygranular structure is developed in the wider line. The fraction of Sigma3 boundaries is increased as the line width increases but is decreased in the blanket film. A new interpretation of textural evolution in damascene interconnect lines after annealing is suggested, based on the state of stress and growth mechanisms of Cu deposits.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.5
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available