Journal
JETP LETTERS
Volume 81, Issue 10, Pages 514-518Publisher
MAIK NAUKA/INTERPERIODICA/SPRINGER
DOI: 10.1134/1.1996760
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Electron transport has been studied in the gallium arsenide/granulated SiO2 film heterostructure with Co nanoparticles and in the gallium arsenide/TiO2 film heterostructure with Co island sublayers. When electrons are injected from a film into a semiconductor, a new phenomenon is observed, which is called injection magnetoresistance. For the SiO2(Co)/GaAs structure with 60 at. % Co in a magnetic field of 23 kOe at a voltage of 50 V, the injection magnetoresistance reaches 5200% at room temperature. (C) 2005 Pleiades Publishing, Inc.
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